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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
FCP16N60 / FCPF16N60
600V N-Channel MOSFET Features
* 650V @TJ = 150C * Typ. Rds(on) = 0.22 * Ultra low gate charge (typ. Qg=55nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested
SuperFETTM
Description
SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
March 2007
D
G GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FCP16N60
16 10.1 48
FCPF16N60
600 16* 10.1* 48*
Unit
V A A A V mJ A mJ V/ns
30 450 16 20.8 4.5 167 1.33 -55 to +150 300 37.9 0.3
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FCP16N60
0.75 62.5
FCPF16N60
3.3 62.5
Unit
C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FCP16N60 / FCPF16N60 Rev. B
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FCP16N60 FCPF16N60
Device
FCP16N60 FCPF16N60
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C ID = 250A, Referenced to 25C VGS = 0V, ID = 16A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
600 -------3.0 ----------(Note 4, 5)
Typ
-650 0.6 700 -----0.22 11.5 1730 960 85 45 110 42 130 165 90 55 10.5 28
Max Units
----1 10 100 -100 5.0 0.26 -2250 1150 -60 -85 270 340 190 70 13 -V V V/C V A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 16A RG = 25
Switching Characteristics
-----
VDS = 480V, ID = 16A VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS =16A VGS = 0V, IS = 16A dIF/dt =100A/s
(Note 4)
------
---435 7.0
16 48 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FCP16N60 / FCPF16N60 Rev. B
2
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
10
2
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
ID, Drain Current [A]
ID , Drain Current [A]
10
1
10
1
150 C
o
25 C 10
0
o
-55 C
*Note: 1. VDS = 40V 2. 250s Pulse Test
o
10
0
*Notes : 1. 250s Pulse Test 2. TC = 25 C
10
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
10
2
0.6
0.5
RDS(ON) [],
0.4
VGS = 10V
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
10
1
0.3
VGS = 20V
0.2
10
0
150 C
o
25 C
*Notes : 1. VGS = 0V 2. 250 s Pulse Test
o
0.1
*Note : TJ = 25 C
o
0.0
0
5
10
15
20
25
30
35
40
45
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
7000
Ciss = Cgs + Cgd (Cds = shorted)
12
6000 5000
Coss = Cds + Cgd
VGS, Gate-Source Voltage [V]
Crss = Cgd
10
VDS = 100V VDS = 250V VDS = 480V
Capacitance [pF]
4000 3000 2000 1000 0 -1 10
Coss
*Notes : 1. VGS = 0 V 2. f = 1 MHz
8
6
Ciss
4
Crss
2
*Note : ID = 16A
10
0
10
1
0
0
10
20
30
40
50
60
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FCP16N60 / FCPF16N60 Rev. B
3
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature
3.0
1.2
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
RDS(ON), (Normalized)
2.0
1.0
1.5
0.9
*Notes : 1. VGS = 0 V 2. ID = 250 A
1.0
*Notes : 1. VGS = 10 V 2. ID = 8 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FCP16N60
Operation in This Area is Limited by R DS(on)
Figure 9-2. Maximum Safe Operating Area for FCPF16N60
Operation in This Area is Limited by R DS(on)
10
2
10 us 100 us
10
2
10 us
ID, Drain Current [A]
ID, Drain Current [A]
10
1
1 ms DC
10
1
100 us 1 ms 10 ms 100 ms DC
*Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
0
10
0
10
-1
*Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
20
15
ID, Drain Current [A]
10
5
0 25
50
75
100
125
150
TC, Case Temperature [C]
FCP16N60 / FCPF16N60 Rev. B
4
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Figure 11-1. Transient Thermal Response Curve (FCP16N60)
10
0
ZJC(t), Thermal Response
D = 0 .5 0 .2
10
-1
* N o te s : o 1 . Z JC (t) = 0 .7 5 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z JC (t)
0 .1 0 .0 5 0 .0 2 0 .0 1
PDM t1
s in g le p u ls e
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve (FCPF16N60)
10
1
ZJC(t), Thermal Response
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
*N o te s : o 1 . Z J C (t) = 3 .3 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
0 .0 2 0 .0 1
PDM t1
s in g le p u ls e
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCP16N60 / FCPF16N60 Rev. B
5
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP16N60 / FCPF16N60 Rev. B
6
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCP16N60 / FCPF16N60 Rev. B
7
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
) (45
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
FCP16N60 / FCPF16N60 Rev. B
8
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FCP16N60 / FCPF16N60 Rev. B
9
15.87 0.20
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FCP16N60 / FCPF16N60 600V N-Channel MOSFET
tm
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information Preliminary
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I24
No Identification Needed
Full Production
Obsolete
Not In Production
10 FCP16N60 / FCPF16N60 Rev. B
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